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NTMSD2P102LR2
FETKY ?
Power MOSFET and Schottky Diode
Dual SO?8 Package
Features
? High Efficiency Components in a Single SO?8 Package
? High Density Power MOSFET with Low R DS(on) ,
http://onsemi.com
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?
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Schottky Diode with Low V F
Logic Level Gate Drive
Independent Pin?Outs for MOSFET and Schottky Die
Allowing for Flexibility in Application Use
Less Component Placement for Board Space Savings
SO?8 Surface Mount Package, Mounting Information for SO?8
Package Provided
Pb?Free Package is Available
MOSFET
?2.3 AMPERES, ?20 VOLTS
90 m W @ V GS = ?4.5 V
SCHOTTKY DIODE
2.0 AMPERES, 20 VOLTS
Applications
? Power Management in Portable and Battery?Powered Products, i.e.:
Computers, Printers, PCMCIA Cards, Cellular and Cordless Telephones
580 mV @ I F = 2.0 A
A
2
7
S
4
5
MOSFET MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating Symbol Value Unit
Drain?to?Source Voltage V DSS ?20 V
Gate?to?Source Voltage ? Continuous V GS " 10 V
Thermal Resistance, Junction?to?Ambient
(Note 1) R q JA 175 ° C/W
Total Power Dissipation @ T A = 25 ° C P D 0.71 W
Continuous Drain Current @ T A = 25 ° C I D ?2.3 A
Continuous Drain Current @ T A = 100 ° C I D ?1.45 A
Pulsed Drain Current (Note 4) I DM ?9.0 A
1 8
8
1 A
6
SO?8 3
CASE 751 G
STYLE 18
TOP VIEW
MARKING DIAGRAM
& PIN ASSIGNMENTS
C
C
D
D
Thermal Resistance, Junction?to?Ambient
(Note 2)
Total Power Dissipation @ T A = 25 ° C
Continuous Drain Current @ T A = 25 ° C
Continuous Drain Current @ T A = 100 ° C
Pulsed Drain Current (Note 4)
Thermal Resistance, Junction?to?Ambient
(Note 3)
Total Power Dissipation @ T A = 25 ° C
Continuous Drain Current @ T A = 25 ° C
Continuous Drain Current @ T A = 100 ° C
Pulsed Drain Current (Note 4)
Operating and Storage Temperature Range
Single Pulse Drain?to?Source Avalanche
Energy ? Starting T J = 25 ° C
R q JA
P D
I D
I D
I DM
R q JA
P D
I D
I D
I DM
T J , T stg
E AS
105
1.19
?2.97
?1.88
?12
62.5
2.0
?3.85
?2.43
?15
?55 to +150
350
° C/W
W
A
A
A
° C/W
W
A
A
A
° C
mJ
1
Anode
2
Anode
3
Source
4
Gate
E2P102
A
Y
WW
G
8
Cathode
7
Cathode
6
Drain
5
Drain
(Top View)
= Device Code
= Assembly Location
= Year
= Work Week
= Pb?Free Package
(V DD = ?20 Vdc, V GS = ?4.5 Vdc,
Peak I L = ?5.0 Apk, L = 28 mH, R G = 25 W )
ORDERING INFORMATION
Maximum Lead Temperature for Soldering
Purposes, 1/8 ″ from Case for 10 Seconds
T L
260
° C
Device
Package
Shipping ?
Stresses exceeding Maximum Ratings may damage the device. Maximum
NTMSD2P102LR2
SO?8
2500/Tape & Reel
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
NTMSD2P102LR2G
SO?8
2500/Tape & Reel
Recommended Operating Conditions may affect device reliability.
1. Minimum FR?4 or G?10 PCB, Steady State.
2. Mounted onto a 2 ″ square FR?4 Board (1 ″ sq. 2 oz Cu 0.06 ″ thick single
sided), Steady State.
3. Mounted onto a 2 ″ square FR?4 Board (1 ″ sq. 2 oz Cu 0.06 ″ thick single
sided), t ≤ 10 seconds.
4. Pulse Test: Pulse Width = 300 m s, Duty Cycle = 2%.
(Pb?Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2006
May, 2006? Rev. 3
1
Publication Order Number:
NTMSD2P102LR2/D
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